2001. 9. 18 1/1 semiconductor technical data KTC9014 epitaxial planar npn transistor revision no : 1 general purpose application. switching application. features excellent h fe linearity : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.). low noise :nf=1db(typ.) at f=1khz. complementary to ktc9015. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) note : h fe classification a:60 150, b:100 300, c:200 600, c1:200 320, c2:280 420, c3:380 600, d:400 1000 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 50 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na dc current gain h fe (note) v ce =5v, i c =1ma 60 - 1000 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =1ma, f=100mhz 60 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf v ce =6v, i c =0.1ma, rg=10k u , f=1khz - 1.0 10 db characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma emitter current i e -150 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
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